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R.S. Nowicki- Publications

1. E.A. Fagen, R.S. Nowicki and R. Seguin, "Effects of DC Substrate Bias on the Props of RF Sputtered Germanium Ditellunde Films," J. Appl. Phys. 45 (1974) 50.
2. R.S. Nowicki, W.D. Buckley, W.D. Mackintosh and I.V. Mitchell, "Effects of the Deposition Parameters on the Properties of RF Sputtered Molybdenum Films," J. Vac. Sci. Technol 11 (1974) 675.
3. J.M. Harris, S.S. Lau, M.-A. Nicholet and R.S. Nowicki, "Studies of the Ti-W Metalization System on Si," J. Electrochem. Soc. 123 (1976) 120.
4. R.S. Nowicki, "Properties of RF Sputtered AI2O3 Films Deposited by Planar Magnetron," J. Vac. Sci. Technol. 14 (1977) 127.
5. R.S. Nowicki and I. Wang, "Improvement of the Diffusion Barrier Properties of RF Sputtered Molybdenum," J. Vac. Sci. Techol. 15 (1978) 232.
6. R.S. Nowicki, J.M. Harris, M.-A. Nicolei and I.V. Mitchell, "Studies of the Ti•W/Au Mealization on Aluminum," Thin Solid Films, 53 (1978) 195.
7. A.J. Learn & R.S. Nowicki, "Metholds for Minimizing Silicon Growth in Aluminum Films," Appl. Phys. Lett.35 (1979) 611.
8. R.S. Nowicki, "Influence of Residual Gases on the Properties of DC Magnetron Sputtered Aluminum-Silicon," J. Vac. Sci. Technol. 17 (1980) 384.
9. R.S. Nowicki and A.J. Learn, "Studies of Silicon Regrowth with Aluminum and Aluminum Alloy Metalizations," Thin Solid Films, 67 (1980) 385.
10. J.E. Baker, R.J. Blattner, S. Nadel, C.A. Evans, Jr. and R.S. Nowicki, "Thermal Annealing Study of the Au/Ti-W Metalizations on Silison," Thin Solid Films, 69 (1980) 53.
11. R.S. Nowicki, "The RF Diode Co-deposition of RefractoryMetal Silicides," Solid State Technol. 23 (1980) 95.
12. R.S. Nowicki, "The Origins of Minimization of Defects in Sputtered Thin Films," Proc. Sol. Vac. Coaters, 23 (1980) 31, & Solid State Technol. 23 (1980) 83.
13. R.S. Nowicki, "and J.F. Moulder, "Comparison of the Properties of Molybdenum Disilicide Films Deposited by DC Magnetron and RF Diode Co-deposition," J. Electrochem. Soc. 128 (1981) 562.
14. R.S. Nowicki and J.F. Moulder, "Studies of Chromium Nitride-Gold as an improved Die Attach Metalization System," Thin solid Films, 83 (1981) 209.
15. K.C. Saraswat, R.S. Nowicki and J.F. Moulder. "Thermal Oxidation of Tantalum Silicide Deposited by Cosputtering," Appl. Phys. Lett. 41 (1982) 1127.
16. R.S. Nowicki, E.V. English, L.E. Gulbrandsen, A.J. Learn and K.W. Schuelte, "Dual RF Diode/DC Magnetron Sputtered Aluminum Alloy Films for VLSI," Semicond. International, March, 1982, p.105.
17. R.S. Nowicki, "Diffusion Barriers Between Gold & Semiconductors," Gold Bull, 15 (1982) 21.
18. R.S. Nowicki and M.-A. Nicolet, "General Aspects of Barrier Layers for Very Large-Scale Integration Applications," Thin Solid Films, 96 (1982) 317.
19. R.S. Nowicki, "Sputtering for VLSI", in VLSI Electronics Microstructure Science, Eds. N.G. Einspruch and D.M. Brown, (Academic Press, Orlando, FL, 1984) p.27.
20. R.S. Nowicki and B. Schiefelbein, "Studies of the Diffusion Barrier Properties of DC Magnetron Sputtered Titanium-Tungsten on Gallium Arsenide and Silicon." Published in Tungsten and Other Refractory Metals for VLSI Applications, Ed. R.S. Blewer, (Materials Res. Soc., Pittsburgh, 1986), p. 341.
21. R.S. Nowicki,, "Practical Preparation of Sputtered Refractory Metal Diffusion Barriers."  Published in Tengsten and Other Refractory Metals for VLSI Applications, Ed. F. Broadbent, (Materials Research Soc., Pittsburgh, 1987). p. 333.
22. D.W. Harris and R.S. Nowicki, "Applications of AES in Microelectronics." Published in Practical Surface Analysis by Auger and X Ray Photoelectron Spectroscopy, Eds. D. Briggs and M. Seah, (Wiley, England, 1990) p. 257.
23. R.S. Nowicki, P. Geraghty, D.W. Harris and G. Lux, "Microanalysis of Tungsten Silicide/Polysilicon Interface:  Effectiveness of an in situ RIE Clean on Native Oxide Removal," presented at the Materials Research Society Spring Meeting, April 17, 1990.  Published in Advanced Metallizations in Microelectronics, Eds. A. Katz, S.P. Murarka and A. Appelbaum, (Materials Research Soc., Pittsburg 1990), p. 193.
24. R.S. Nowicki, C. Fuhs and P. Geraghty, "Comparison of Integrated In Situ RIE Preclean Processes for CVD Tungsen Silicide Deposition Done in a Cluster Tool," presented at the 1990 ISMSS (Semicon:  San Mateo, CA).
25. R.S. Nowicki, P. Geraghty, D. Harris, G. Lux and D. Johnson, "In Situ Native Oxide Clean Followed by Chemical Vapo Depostions of Tungsten Silicide on Polysilicon in a Cluster Tool," J. Vac. Sci. Technol. A9 (1991) 1073.
26. R.S. Nowicki, "Practical Preparation of Refractory Metal Diffusion Barriers," presented at the International Conference on Materials and Process Characterization for VLSI, October, 1991, Shanghai, China.  Published as Materials and Process Characterization for VLSI (ICMPC '91). Eds. X.R. Zong, Y.Y. Wang and X.Y Gu (National Microanalysis Center for Electronics Materials and Devices, Shanghai, China, 1991). p. 284.

U.S. Patents:
1) U.S. 4,424,101 (1984) to R.S. Nowicki, "Method of Depositing Doped Refractory Metal Silicides Using DC Magnetron/RF Diode Co-Sputtering Techniques."
2) U.S. 4,513,905 (1985) to R.S. Nowicki and J.F. Mouldor, "Integrated Circuit Metalization Technique."
3) R.S. Nowicki, "Method for Improvement of Diffusion Barrier Properties of CVD Tungsten Films" (pending).